Semiconductor Devices Having Fin Field Effect Transistor (FinFET) Structures and Manufacturing and Design Methods Thereof

ABSTRACT

Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active FinFET disposed over a workpiece comprising a first semiconductive material, the active FinFET comprising a first fin. An electrically inactive FinFET structure is disposed over the workpiece proximate the active FinFET, the electrically inactive FinFET comprising a second fin. A second semiconductive material is disposed between the first fin and the second fin.

PRIORITY CLAIM AND CROSS-REFERENCE

This patent application is a continuation of U.S. patent applicationSer. No. 14/820,794, entitled “Semiconductor Devices having Fin FieldEffect Transistor (FinFET) Structures and Manufacturing and DesignMethods Thereof,” filed on Aug. 7, 2015, which is a divisional ofco-pending U.S. patent application Ser. No. 13/410,207, entitled“Semiconductor Devices having Fin Field Effect Transistor (FinFET)Structures and Manufacturing and Design Methods Thereof,” filed on Mar.1, 2012, now U.S. Pat. No. 9,105,744 issued Aug. 11, 2015 which areincorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

Multiple gate field-effect transistors (MuGFETs) are a recentdevelopment in semiconductor technology which typically are metal oxidesemiconductor FETs (MOSFETs) that incorporate more than one gate into asingle device. The multiple gates may be controlled by a single gateelectrode, where the multiple gate surfaces act electrically as a singlegate, or by independent gate electrodes. One type of MuGFET is referredto as a FinFET, which is a transistor structure with a fin-likesemiconductor channel that is raised vertically out of the semiconductorsurface of an integrated circuit.

FinFETs are a relatively new technology in semiconductor devices.Improved design methods, manufacturing methods, and structures forsemiconductor devices that include FinFETs are needed in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a cross-sectional view of a portion of a semiconductordevice in accordance an embodiment of the present disclosure thatincludes a plurality of active FinFETs and at least one electricallyinactive FinFET structure;

FIG. 2 is a cross-sectional view of an initial layout of a semiconductordevice that includes a plurality of active FinFETs;

FIG. 3 is a top view of the initial layout shown in FIG. 2;

FIG. 4 is a cross-sectional view of a layout for a semiconductor deviceincluding a plurality of dummy FinFETs or electrically inactive FinFETstructures disposed between the active FinFETs in accordance with anembodiment;

FIG. 5 shows a cross-sectional view of the semiconductor device shown inFIG. 4 after a semiconductive material has been formed between fins ofthe active FinFETs and inactive FinFET structures;

FIG. 6 shows a top view of the embodiment shown in FIG. 5;

FIG. 7 show a cross-sectional view of the embodiment shown in FIGS. 5and 6 after contacts have been formed over the active FinFETs;

FIG. 8 shows a schematic of a circuit implementing the novelsemiconductor devices described herein;

FIG. 9 is a top view of an embodiment wherein contacts are includedbetween the dummy FinFETs;

FIGS. 10 and 11 are cross-sectional views of portions of the embodimentshown in FIG. 9;

FIG. 12 is a top view of another embodiment of the present disclosure,wherein the inactive FinFET structures are fragmented and wherein theinactive FinFETs are disposed only in predetermined regions of thesemiconductor device; and

FIG. 13 is a flow chart of a method of designing a semiconductor devicein accordance with an embodiment of the present disclosure.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION

The making and using of the embodiments of the present disclosure arediscussed in detail below. It should be appreciated, however, that thepresent disclosure provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the disclosure, and do not limit the scope of the disclosure.

Embodiments of the present disclosure are related to multiple gatesemiconductor devices such as FinFETs. Novel semiconductor devicesincluding active and inactive FinFETs, methods of manufacturing thereof,and design methods thereof will be described herein.

Referring first to FIG. 1, a cross-sectional view of a portion of asemiconductor device 100 in accordance an embodiment of the presentdisclosure is shown. The semiconductor device 100 includes a pluralityof active FinFETs 104 and at least one electrically inactive FinFETstructure 106. The active FinFETs 104 comprise electrically activeFinFETs or functioning FinFETs. By use of the term “active FinFET,” itis not meant to imply the structures are powered up or performing anelectrical function at the illustrated stage of manufacture. Rather,“active FinFETs” 104 are adapted to function electrically in a finishedsemiconductor device 100, when appropriately configured and powered. Theactive FinFETs 104 each include a channel region 107 in semiconductorregion 102, which is comprised of a semiconductive material, a gatedielectric 108 comprising an insulating material disposed over thechannel region 107, and a gate 110 comprising a semiconductive material,a conductive material, or combinations or multiple layers thereof,disposed over the gate dielectric 108. The channel regions 107 of theactive FinFETs 104 are also referred to herein as first channel regions.The channel regions 107 are also referred to as fins 107.

The electrically inactive FinFET structures 106 are also referred toherein as inactive FinFET structures, inactive FinFETs, and/or dummyFinFETs, as examples. Throughout this disclosure, the terms “inactiveFinFET” and “dummy FinFET” can be used interchangeably. The electricallyinactive FinFET structures 106 are comprised of the same materials andthe same material layers that the active FinFETs 104 are formed of, yetthey are not adapted to function electrically in the finishedsemiconductor device 100. The inactive FinFET structures 106 eachinclude a channel region 107′, a gate dielectric 108 and a gate 110comprising the same materials that the active FinFET structures 104 arecomprised of, for example. The channel regions 107′ of the inactiveFinFET structures 106 are also referred to herein as second channelregions 107′. In accordance with some embodiments of the presentdisclosure, the inactive FinFETs 106 are not connected or coupled to anoutside contact for making electrical contact outside of thesemiconductor device 100.

The novel semiconductor device 100 includes at least one inactive FinFET106 disposed between two of the active FinFETs 104. In the example shownin FIG. 1, two inactive FinFETs 106 are disposed between two activeFinFETs 104. Alternatively, only one inactive FinFET 106, or three ormore inactive FinFETs 106 may be disposed between two active FinFETs104, depending on the design and layout of the semiconductor device 100.

In some embodiments, a semiconductive material 128 (shown in phantom inFIG. 1) may be formed between channel regions 107 and 107′ of the activeand inactive FinFETs 104 and 106, between pairs of channel regions 107of adjacent active FinFETs 104, and between pairs of channel regions107′ of adjacent inactive FinFETs 106. The semiconductive material 128is also referred to herein as a second semiconductive material. Thesecond semiconductive material 128 may comprise the same type ofmaterial as the first semiconductive material of the semiconductorregion 102, or alternatively, the second semiconductive material 128 maycomprise a different type of semiconductive material as the firstsemiconductive material of the semiconductor region 102.

In some applications, it may be desirable to form epitaxial source/drainregions between the channel regions 107 and/or 107′ using thesemiconductive material 128. The presence of the novel inactive FinFETs106 advantageously improves the epitaxial growth of the semiconductivematerial 128, ensuring that the space between the channel regions 107and/or 107′ is filled completely to a top surface of a semiconductorregion 102, e.g., to at least the top surface of the channel regions 107and 107′, in some embodiments. In some embodiments, epitaxially growingthe second semiconductive material 128 comprises forming a secondsemiconductive material 128 that is merged over an underlying topographyover the semiconductor region_102, for example.

The inactive FinFETs 106 may be implemented in a design of asemiconductor device 100 by first, designing a layout for the activeFinFETs 104. FIG. 2 is a cross-sectional view of an initial layout thatincludes a plurality of active FinFETs 104, as an example. FIG. 3 is atop view of the initial layout of the semiconductor device 100 shown inFIG. 2. FIG. 2 shows a cross-section of the top view shown in FIG. 3.The structure shown in FIGS. 2 and 3 may not be actually fabricated inaccordance with some embodiments, but is shown to illustrate an initialdesign layout before including the inactive FinFETs 106 in the layout.The semiconductor device 100 layout shown is merely an example, andother layouts and designs may also be used. One or more active FinFETs104 may be formed in blocks 105 which are repeated several (e.g., dozensor hundreds of times) across a surface of the fin 102 in someembodiments, for example. The blocks 105 may comprise circuit blockscomprising a plurality of PFETs or a plurality of NFETs, for example,wherein PFETs are not combined with NFETs and vice versa, in someembodiments.

The semiconductor device 100 includes a semiconductor region 102 thatmay comprise a P-substrate, for example, although alternatively, thesemiconductor region 102 may comprise an N-substrate. A well 120comprising an N well (or alternatively a P well) may be formed proximatethe top of the semiconductor region_102, as shown. The active FinFETs104 include channel regions 107 formed of the well 120 material, a hardmask material 124 comprising an insulating material disposed over thegate 110, and sidewall spacers 126 also comprising an insulatingmaterial formed over sidewalls of the gate dielectric 108, gate 110, andhard mask 124. Isolation regions 122 that may comprise shallow trenchisolation (STI) oxide or other insulating regions may be formed atvarious locations within the semiconductor region 102. The activeFinFETs 104 may comprise p-channel metal oxide semiconductor (PMOS)devices or n-channel metal oxide semiconductor (NMOS) devices, or may beimplemented in diode applications, as examples.

Region 112 may comprise active FinFETs 104 comprising PMOS devices insome embodiments. The semiconductor device 100 may include other regions(not shown) comprising active FinFETs comprising NMOS devices, forexample. Alternatively, region 112 and other regions of thesemiconductor device 100 may comprise the same type of devices, or othertypes of devices.

The top view of the semiconductor device 100 layout shown in FIG. 3illustrates that the active FinFETs 104 extend horizontally over thesurface of the workpiece 102 in a horizontal direction in the viewshown. In some designs, a semiconductive material 128 will be formed ina later manufacturing process step that may form source and drainregions of the active FinFETs 104. Leads 130 will later be formed thatconnect to the semiconductive material 128 by vias 132, and contacts 136will also later be formed that connect to the gates 110 of the activeFinFETs 104 to leads 109. The contacts 130 and 136 may comprise slotcontacts that also function as interconnects for the semiconductordevice 100, for example.

Referring again to FIG. 2, after the layout for the active FinFETs 104is determined, the dimensions d1 a and d1 b comprising the distancesbetween the active FinFETs 104 are analyzed. Some distances betweenadjacent active FinFETs 104 may be larger than others. In the exampleshown in FIGS. 2 and 3, dimension d1 a is greater than dimension d1 b,for example.

The placement of inactive FinFETs 106 is determined based on thedistances between the active FinFETs 104 in accordance with embodimentsof the present disclosure. The amount of semiconductive material 128desired to be formed between the plurality of active FinFETs 104 mayalso be considered in the placement of the inactive FinFETs 106, in someembodiments. The layout of the semiconductor device 100 is then changedto include the inactive FinFETs 106 in the design. The presence of theinactive FinFETs 106 improves the results of subsequent manufacturingprocess steps by providing a uniform structure, e.g., an improved, morehomogeneous topography, in some embodiments. For example, ifsemiconductive material 128 is formed between the active FinFETs 104 inthe design shown in FIGS. 2 and 3 using an epitaxial growth process, aninsufficient amount of the semiconductive material 128 may be formedbetween active FinFETs 104 having large distances between them, such asdimension d_(1a). This may have a deleterious effect on thesemiconductor device 100 performance in some applications. Aninsufficient amount of semiconductive material 128, e.g., that does notcompletely reach the top surface of the channel regions 107 of theactive FinFETs 104 may result in high leakage current from a drain ofthe active FinFETs 104 to the fins 102 (e.g., P-N junction leakage tothe substrate).

FIG. 4 is a cross-sectional view of the layout for the semiconductordevice 100 shown in FIGS. 2 and 3 after the inclusion of a plurality ofelectrically inactive FinFETs 106 disposed between the active FinFETs104 in accordance with an embodiment. The number of inactive FinFETs 106included between the active FinFETs 104 is a function of the dimensionsd_(1a) and d_(1b) comprising the distances between the active FinFETs104. As examples, three inactive FinFETs 106 are disposed between activeFinFETs 104 to accommodate dimension d_(1a), and no inactive FinFETs 106is disposed between active FinFETs 104 for dimension d_(1b).Alternatively, one or more inactive FinFETs 106 may be included in thedesign.

In some embodiments, the layout for the semiconductor device 100 may bedesigned so that dimensions d2 comprising the distances between adjacentactive FinFETs 104 and/or inactive FinFETs 106, and also between pairsof adjacent active FinFETs 104 and pairs of adjacent inactive FinFETs106, is substantially the same, as shown in FIG. 4. Dimension d2 maycomprise about 0.04 μm to about 3 μm, for example, althoughalternatively, dimension d2 may comprise other dimensions. Dimension d2may vary in a design by core gate length and/or input/output (IO) gatelength, for example. Dimension d2 may be selected to be substantiallyequal to dimension d1 b comprising a smallest distance between twoactive FinFETs 104 in some embodiments, for example. Alternatively,dimensions d2 comprising the distances between adjacent active FinFETs104 and/or inactive FinFETs 106, and between pairs of adjacent activeFinFETs 104 and pairs of adjacent inactive FinFETs 106 may be different.

To manufacture the semiconductor device 100, the manufacturing processflow is performed as it would be without the inclusion of the inactiveFinFETs 106, other than modifying a lithography mask used to patterngates no and channel regions 107 of the active FinFETs 104. For example,first, a semiconductor region 102 is provided, as shown in FIG. 4. Thesemiconductor region_102 may comprise silicon or other semiconductormaterials and may be covered by an insulating layer, for example. Thesemiconductor region_102 may also include other active components orcircuits, not shown. The semiconductor region_102 may comprise siliconoxide over single-crystal silicon, for example. The semiconductor region102 may include other conductive layers or other semiconductor elements,e.g., transistors, diodes, etc. Compound semiconductors, GaAs, InP,Si/Ge, or SiC, as examples, may be used in place of silicon. Thesemiconductor region 102 may comprise a silicon-on-insulator (SOI) or agermanium-on-insulator (GOI) substrate, as examples. The semiconductorregion 102 may comprise a first semiconductive material in someembodiments described herein.

Isolation regions 122 may be formed in the semiconductor region 102, bypatterning the semiconductor region 102 and filling the patterns with aninsulating material. The isolation regions 122 may comprise silicondioxide or other insulating materials, for example. The well 120 isformed in the semiconductor region 102 using an implantation process,and fins 107 and 107′ are formed in the well 120 using lithography orother methods. The gate dielectric 108, gate 110, hard mask 124, andsidewall spacers 126 may be formed over the channel regions 107 and 107′after the formation of the channel regions 107 and 107′.

In another illustrative process, an oxide layer (not shown) may beformed over the surface of an unpatterned workpiece, and the oxide layeris then patterned to form therein a series of trenches, the trenchescorresponding to the size and location of the subsequently formed activeFinFETs 104 and inactive FinFETs 106. Using known epitaxial growthprocesses, fins 102 may be epitaxially grown.

Regardless of the fin formation process, a gate dielectric material 108may be formed over the semiconductor region 102, and a gate material 110comprising a semiconductive material such as silicon or othersemiconductor materials is formed over the dielectric material layer108. The hard mask 124 is deposited and patterned, and the hard mask 124and optionally also a layer of photoresist (not shown) is then used as amask while the gate material 110 and the gate dielectric material 108are patterned. Sidewall spacers 126 are then formed on sides of the gatedielectric 108, gate 110, and hard mask 124. The sidewall spacers 126may comprise silicon nitride, silicon dioxide, other insulators, orcombinations or multiple layers thereof, formed by a deposition and anisotropic etch process, as examples, although alternatively, thesidewall spacers 126 may comprise other materials and may be formedusing other methods.

The hard mask 124 is deposited over the gate material 110 and ispatterned. The hard mask 124 and optionally also a layer of photoresist(not shown) are then used as a mask while the gate material 110, gatedielectric material 108, and also the well 120 of the semiconductorregion 102 are patterned, forming the gates 110, gate dielectric 108,and channel regions 107 and 107′ of the active and inactive FinFETs 104and 106.

Advantageously, the inactive FinFETs 106 are patterned using the samelithography mask that the active FinFETs 104 are patterned with in someembodiments, which avoids requiring the use of an additional lithographymask.

The semiconductor region 102 of the active and inactive FinFETs 104 and106, respectively, may extend horizontally by about 0.2 μm to about 50μm and may comprise a width of about 50 nm, as an example, althoughalternatively, the semiconductor region 102 may comprise otherdimensions, depending on the application, for example.

FIG. 5 shows a cross-sectional view of the semiconductor device 100shown in FIG. 4 after a semiconductive material 128 has been formedbetween channel regions 107 and 107′ of adjacent active FinFETs 104 andinactive FinFETs 106, between pairs of adjacent active FinFETs 104, andbetween pairs of adjacent inactive FinFETs 106. The formation of thesemiconductive material 128 may comprise an epitaxial growth method,although the semiconductive material 128 may alternatively be formed byother methods. The hard mask 124 material and the sidewall spacer 126material prevents the formation of the semiconductive material 128 onthe top surface of the active and inactive FinFETs 104 and 106 and onthe sidewalls of the gate 110 and gate dielectric 108 of the active andinactive FinFETs 104 and 106, respectively, during the epitaxial growthprocess. The semiconductive material 128 is grown proximate to thechannel regions 107 and 107′ of the active and inactive FinFETs 104 and106, respectively. The semiconductive material 128 may comprise Si,SiGe, or SiC, as examples, although alternatively, the semiconductivematerial 128 may comprise other materials. The semiconductive material128 may comprise SiP, SiCP, SiCN, or SiGeP for an NFET device, asanother example.

In some embodiments, the semiconductive material 128 at least partiallyfills the spaces between adjacent channel regions 107 and 107′ of theactive FinFETs 104 and inactive FinFETs 106, adjacent pairs of channelregions 107 of the active FinFETs 104, and/or adjacent pairs of channelregions 107′ of the inactive FinFETs 106. In other embodiments, thesemiconductive material 128 may be formed wherein the top surface of thesemiconductive material 128 is substantially coplanar with the topsurface of the channel regions 107 and 107′ of the active and inactiveFinFETs 104 and 106 in some embodiments. In other embodiments, thesemiconductive material 128 may have a top surface that is raised abovethe top surface of the channel regions 107 and 107′, e.g., by about 45nm or less, and may have a top surface that is lower than a gate heightin some embodiments. Alternatively, the top surface of the channelregions 107 and/or 107′ may comprise other relative dimensions, forexample.

In some embodiments, the epitaxial growth of the semiconductive material128 may comprise a “dual epitaxial” approach, wherein first regions 112of the fins 102 are masked while one type of semiconductive material isepitaxially grown in other regions (not shown) of the semiconductorregion 102, and the other regions of the fins 102 are masked whileanother type of semiconductive material is epitaxially grown in thefirst regions 112 of the fins 102, for example. A different type ofsemiconductive material 128 may be formed for NMOS and PMOS devices insome applications, for example. A semiconductive material 128 comprisingSi may be used for an NFET device, and a semiconductive material 128comprising SiGe may be used for a PFET device, in some applications.Alternatively, other types of semiconductor materials may be used forthe semiconductive material 128.

The presence of the electrically inactive FinFETs 106 increases anamount of semiconductive material 128 growth proximate the electricallyinactive FinFET structures 106, and thus increases the semiconductivematerial 128 growth proximate the active FinFETs 104 in close proximityto the inactive FinFET structures 106. Advantageously, the presence ofthe inactive FinFETs 106 results in the semiconductive material 128completely filling the spaces between the channel regions 107 of theactive and inactive FinFETs 104 and 106 in some embodiments, whichprevents or reduces leakage current in the active FinFETs 104.

FIG. 6 shows a top view of the embodiment shown in FIG. 5. Onecross-sectional view is shown of FIG. 6 in FIG. 5, and anothercross-sectional view is shown of FIG. 6 in FIG. 7. The electricallyinactive FinFETs 106 are disposed over the semiconductor region 102proximate the electrically active FinFETs 104. Contacts 136 are formedin upper material layers of the semiconductor device 100 over the activeFinFETs 104. A contact 136 is coupled to at least some of the pluralityof active FinFETs 104 in accordance with embodiments. No contacts areformed over the inactive FinFETs 106 in some embodiments, which areelectrically inactive. Contacts 132 and vias 130 provide electricalcontact to the semiconductive material 128 which forms source and drainregions of the active FinFETs 104 in some embodiments.

FIG. 7 shows a cross-sectional view of region 112 of the embodimentshown in FIGS. 5 and 6 after the contacts 136 have been formed over theactive FinFETs 104. The hard mask 124 is removed before the formation ofthe contacts 136, and an optional conductive or semiconductive material138 may be formed over the gate 110 of the active and inactive FinFETs104 and 106 before the formation of the contacts 136 over the activeFinFETs 104. The material 138 may comprise a silicide forming using asilicidation process, or a semiconductive material formed using anepitaxial growth process. Alternatively, the material 138 may compriseother types of materials formed using other methods. In someembodiments, the material 138 may comprise NiSix, as another example.The material 138 may alternatively comprise other silicide materials.

The contacts 130 and 136 and vias 132 may be formed using singledamascene processes or using a dual damascene process, for example, bydepositing an insulating material 140 over the semiconductor device 100over the active and inactive FinFETs 104 and 106, patterning theinsulating material 140, and filling the patterns in the insulatingmaterial 140 with a conductive material. The contacts 130 and 136 andvias 132 may alternatively be formed using a subtractive etch process ofa conductive material followed by deposition of the insulating material140 between the contacts 130 and 136 and vias 132.

FIG. 8 shows a schematic of a circuit 150 implementing the novelsemiconductor devices 100 described herein. The circuit 150 shown inFIG. 8 may be implemented as an ESD circuit for a logic device, ananalog device, a memory device (such as a static random access memory(SRAM) device other types of memory devices), or an input/output (I/O)circuit, as examples, although alternatively, the circuit 150 may beused in other applications. In some embodiments, the active FinFET 104described herein, manufactured with inactive FinFETs 106 proximatewidely-spaced active FinFETs 104, may be implemented in the circuit 150as a replacement for conventional planar devices in an ESD circuitapplication. The circuit 150 may comprise an I/O ESD diode that includesthe dummy FinFETs 106 described herein, for example, or other diodeapplications.

FIG. 9 is a top view of an embodiment wherein contacts 130 are includedbetween the dummy FinFETs 106. FIGS. 10 and 11 are cross-sectional viewsof portions of the embodiment shown in FIG. 9. Contacts 130 comprisingslot contacts and vias 132 may be formed between each of the dummyFinFETs 106 in some embodiments, as shown, which may comprise a commondrain. Methods of manufacturing the semiconductor device 100 may includecoupling contacts 130 to the second semiconductive material 128 betweenfins 107 of adjacent active FinFETs 104 and channel regions 107′ ofinactive FinFET structures 106, between channel regions 107′ of pairs ofadjacent inactive FinFET structures 106, or between channel regions 107of pairs of adjacent active FinFETs 104, for example.

FIG. 10 illustrates electrical connections that may be made to the novelsemiconductor devices 100. The semiconductive material 128 between eachdummy FinFET 106 and between adjacent active FinFETs 104 and dummyFinFETs 106 may be electrically coupled to a Vin contact. Other portionsof the semiconductor device 100 such as the gates G of the activeFinFETs 104 and a portion (e.g., N+ portion) of the semiconductor region102 may be coupled to a Vdd contact, as shown. FIG. 11 illustrates aview oriented perpendicular to the view shown in FIG. 10, showing ashape of the merged epitaxially grown semiconductive material 128 and asilicide 129 formed over the semiconductive material 128.

FIG. 12 is a top view of another embodiment of the present disclosure,wherein the inactive FinFETs 106 are fragmented and wherein the inactiveFinFETs 106 are disposed only in predetermined regions of thesemiconductor device 100. While the inactive FinFETs 106 are continuousin the embodiment shown in FIG. 6, the inactive FinFETs 106 in FIG. 12are discontinuous or comprise multiple segments 106 a, 106 b, and 106 c.The segments 106 a, 106 b, and 106 c include the materials describedearlier for the continuous inactive FinFETs 106: the channel regions107′, gate dielectric 108, and gates 110. Dimensions d2 comprising thedistances between the active FinFETs 104 and adjacent inactive FinFETs106 and between pairs of adjacent inactive FinFET 106 segments maycomprise similar dimensions previously described for dimension d2 ofFIG. 4. The dimensions d3 comprising the distances between alternatingactive and inactive FinFETs 104 and 106 may comprise about twicedimension d2 plus a width of a channel region 107 or 107′ of an activeor inactive FinFET 104 and 106. Dimension d4 also illustrates that theremay be regions larger than dimensions d2 and d3 that do not include theinactive FinFETs 106, in accordance with some embodiments. The inactiveFinFETs 106 may be placed in some regions of the layout where they wouldhave beneficial use in the semiconductor device 100, yet may be omittedin other regions.

In the cross-sectional views shown in FIGS. 5, 7, 10, and 11, mergedepitaxial growth of the semiconductive material 128 is shown between thechannel regions 107 and/or 107′ of the active and inactive FinFETs 104and 106, wherein the semiconductive material 128 completely fills thespaces between the channel regions 107 and/or 107′. Alternatively, theepitaxial growth of the semiconductive material 128 may be controlledand optimized so that the channel regions 107 and 107′ maintain theirshape topographically: the epitaxial growth of the semiconductivematerial 128 may be non-merged (not shown in the drawings), so that thesemiconductive material 128 partially fills the spaces between thechannel regions 107 and/or 107′, in some embodiments. In otherembodiments, the epitaxial growth of the semiconductor material 128 mayoptionally overfill the spaces between the channel regions 107 and/or107′, as shown in FIGS. 5, 7, and 10.

FIG. 13 is a flow chart 160 of a method of designing a semiconductordevice 100 in accordance with an embodiment of the present disclosure.The method includes determining a layout for active FinFETs 104 (step162), as shown in FIGS. 2 and 3. The distance (e.g., dimensions d1 a andd1 b of FIG. 2) between the active FinFETs 104 is determined (step 164),and the distance determined between the active FinFETs 104 is evaluated(step 166). The method includes modifying the layout to includeelectrically inactive FinFET structures 106 between the active FinFETs104, based on the distance evaluated and an amount of semiconductivematerial 128 desired to be formed between channel regions 107 of theplurality of active FinFETs 104 (step 168). A lithography mask is thenmanufactured for the modified layout (step 170). The lithography mask isthen used to manufacture semiconductor devices 100 (step 172). A layoutfor a lithography mask used for gate 110 pattern definition of theactive FinFETs 104 may be altered to include a pattern definition forthe novel dummy FinFETs 106 described herein, for example.

Embodiments of the present disclosure include semiconductor devices 100including active and inactive FinFETs 104 and 106, and methods ofmanufacturing thereof. Embodiments of the present disclosure also designmethods for semiconductor devices 100 that include both the novel activeand inactive FinFETs 104 and 106 described herein.

Advantages of embodiments of the disclosure include providing novelsemiconductor devices 100 that include both active and inactive FinFETdevices 104 and 106 and structures. The inactive FinFETs 106 improvesemiconductor device 100 performance by improving epitaxial growthprocesses between and proximate channel regions 107 of the activeFinFETs 104. Inserting the dummy FinFETs 106 between widely-spacedactive FinFETs 104 resolves a loading effect problem of epitaxial growthof semiconductive material 128 that may be formed between channelregions 107 of the active FinFETs 104 in some embodiments. The improved,more uniform merged epitaxial growth of the semiconductive material 128prevents contact etch-through, e.g., during contact 136 formation,reducing or preventing leakage current of the active FinFETs 104. Asemiconductive material 128 having improved, uniform epitaxial growthresults in improved silicide 129 formation, such as NiSix, which may beformed over the semiconductive material 128 prior to the formation ofthe contacts 136. The improved silicide 129 formation can prevent highjunction leakage resulting from contact 136 etch-through, for example.The improved epitaxial growth window provided by the inclusion of thenovel dummy FinFETs 106 avoids an epitaxial merge problem inwidely-spaced active FinFET 104 regions.

Furthermore, the dummy FinFETs 106 may easily be tested, e.g., toexamine the structure thereof or analyze the surface elements, using ascanning electron microscope (SEM) image, transmission electronmicroscopy (TEM) image, or energy dispersive X-ray (EDX) analysis. Noadditional lithography masks and no additional manufacturing processsteps are required to fabricate the inactive FinFETs 106. The noveldummy FinFETs 106 and designs described herein are easily implementablein manufacturing process flows for semiconductor devices 100.

In accordance with one embodiment of the present disclosure, asemiconductor device includes an active FinFET disposed over a workpiececomprising a first semiconductive material, the active FinFET comprisinga first fin. An electrically inactive FinFET structure is disposed overthe workpiece proximate the active FinFET, the electrically inactiveFinFET comprising a second fin. A second semiconductive material isdisposed between the first fin and the second fin.

In accordance with another embodiment, a method of manufacturing asemiconductor device includes providing a workpiece, the workpiececomprising a first semiconductive material, and forming a plurality ofactive FinFETs over the workpiece, each of the plurality of activeFinFETs comprising a first fin. The method includes forming a pluralityof electrically inactive FinFET structures over the workpiece proximatethe plurality of active FinFETs, each of the plurality of electricallyinactive FinFET structures comprising a second fin, and partiallyfilling spaces between adjacent first fins and second fins, adjacentpairs of first fins, or adjacent pairs of second fins with a secondsemiconductive material.

In accordance with yet another embodiment, a method of designing asemiconductor device includes determining a layout for a plurality ofactive FinFETs, determining a distance between the plurality of activeFinFETs, and evaluating the distance determined between the plurality ofactive FinFETs. The layout is modified to include an electricallyinactive FinFET structure between two of the plurality of active FinFETsbased on the distance evaluated and an amount of semiconductive materialdesired to be formed proximate fins of the plurality of active FinFETs.

In accordance with yet another embodiment, a semiconductor device isprovided. The semiconductor device includes a fin extending from asubstrate, a first active gate electrode over the fin, and a firstinactive gate electrode over the fin, the inactive gate electrode beingadjacent to the first active gate electrode such that no intermediategate electrodes exist between the inactive gate electrode and the firstactive gate electrode. A first recess in the fin is between the firstactive gate electrode and the inactive gate electrode, and asemiconductor material is positioned in the first recess, thesemiconductor having a different lattice constant than the fin.

In accordance with yet another embodiment, a semiconductor device isprovided. The semiconductor device includes a first active fin fieldeffect transistor (FinFET), the first active FinFET comprising a firstfin, the first fin comprising a first semiconductive material. Anelectrically inactive FinFET structure is disposed over the first finproximate the first active FinFET, and a second semiconductive materialis disposed between the first FinFET and the electrically inactiveFinFET, the second semiconductive material being different than thefirst semiconductive material.

In accordance with yet another embodiment, a semiconductor device isprovided. The semiconductor device includes a first set of finsextending from a substrate, the first set of fins being parallel to eachother, and a first active gate electrode extending over the first set offins. A second active gate electrode extends over the first set of fins,the first active gate electrode being parallel to the second active gateelectrode, and a first inactive gate electrode extends over one or moreof the first set of fins, the first inactive gate electrode beinginterposed between the first active gate electrode and the second activegate electrode. A recess is in a first fin of the first set of fins, therecess being interposed between the first inactive gate electrode andthe first active gate electrode, and a semiconductor material is in therecess, the semiconductor material having a different lattice constantthan the substrate.

Although embodiments of the present disclosure and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. For example, it will be readily understood by those skilled inthe art that many of the features, functions, processes, and materialsdescribed herein may be varied while remaining within the scope of thepresent disclosure. Moreover, the scope of the present application isnot intended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present disclosure,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

What is claimed is:
 1. A device comprising: an input node; a positivepower supply node configured to provide a positive power supply voltage;an Electrostatic Discharge (ESD) device comprising: a first active FinField-Effect Transistor (FinFET) comprising: a source region; a firstgate electrode, wherein the source region and the first gate electrodeare electrically connected to the positive power supply node; a drainregion on an opposite side of the first gate electrode than the drainregion; and a dummy FinFET comprising: a second gate electrode, whereinthe drain region is between the first gate electrode and the second gateelectrode, and the drain region is shared by the dummy FinFET and thefirst active FinFET; and a source/drain region on an opposite side ofthe second gate electrode than the drain region, wherein the drainregion and the source/drain region are connected to the input node. 2.The device of claim 1 further comprising: a second active FinFET, withthe dummy FinFET located between the first active FinFET and the secondactive FinFET, wherein an additional gate and an additional sourceregion of the second active FinFET are further connected to the positivepower supply node.
 3. The device of claim 2 further comprising aplurality of dummy FinFETs comprising a plurality of gate electrodes,with the dummy FinFET being one of the plurality of dummy FinFETs, andall source/drain regions of the plurality of dummy FinFETs are connectedto the input node.
 4. The device of claim 3, wherein the first gateelectrode, the second gate electrode, and the plurality of gateelectrodes are substantially equally spaced.
 5. The device of claim 2,wherein the first active FinFET further comprising: a channel region;and a gate dielectric comprising a portion between the channel regionand the gate dielectric, wherein the source region, the drain region,and the additional source region comprise silicon germanium, and thesource region and the drain region extend higher than an interfacebetween the channel region and the portion of the gate dielectric. 6.The device of claim 1, wherein the second gate electrode is electricallyfloating.
 7. The device of claim 1, wherein the first active FinFETforms a diode of the ESD device.
 8. The device of claim 1 furthercomprising: a plurality of isolation regions; and a plurality ofsemiconductor regions separating the plurality of isolation regions fromeach other, wherein each of the source region and the drain region ofthe first active FinFET and the source/drain region of the dummy FinFETcomprises a merged source/drain region combining epitaxy regions grownfrom the plurality of semiconductor regions.
 9. A device comprising: afirst active Fin Field-Effect Transistor (FinFET) comprising: a firstsource region; a first gate electrode; and a first drain region; asecond active FinFET comprising: a second source region; a second gateelectrode, wherein the first source region, the first gate electrode,the second source region, and the second gate electrode areinterconnected; and a second drain region; and a plurality of dummyFinFETs between the first drain region and the second drain region,wherein the plurality of dummy FinFETs comprises a plurality of dummygate electrodes, and the first gate electrode, the second gateelectrode, and the plurality of dummy gate electrodes have asubstantially uniform pitch.
 10. The device of claim 9, wherein thefirst source region, the first gate electrode, the second source region,and the second gate electrode are connected to a VDD node.
 11. Thedevice of claim 9, wherein the first drain region and the second drainregion are interconnected.
 12. The device of claim 9, wherein the firstsource region and the first gate electrode of the first active FinFETare interconnected to form a first diode.
 13. The device of claim 12,wherein the second source region and the second gate electrode of thesecond active FinFET are interconnected to form a second diode.
 14. Thedevice of claim 12, wherein all source/drain regions of the plurality ofdummy FinFETs are electrically connected to the first drain region andthe second drain region.
 15. The device of claim 9, wherein the firstactive FinFET and the second active FinFET form an electrostaticdischarge (ESD) device of an Input-output (TO) circuit.
 16. A devicecomprising: a first active Fin Field-Effect Transistor (FinFET)comprising: a first source region; a first gate electrode, wherein thefirst source region and the first gate electrode are interconnected toform a first diode; and a first drain region; and a plurality of dummyFinFETs on a side of the first drain region, wherein the plurality ofdummy FinFETs comprises: a plurality of dummy gate electrodes, eachbelonging to one of the plurality of dummy FinFETs; and a plurality ofsource/drain regions, each belonging to one of the plurality of dummyFinFETs, wherein the plurality of source/drain regions is electricallyconnected to the first drain region.
 17. The device of claim 16 furthercomprising a VDD node and a voltage input node, wherein the first diodeis configured to function as an electrostatic discharge (ESD) device,with an anode and a cathode of the first diode connected to the VDD nodeand the voltage input node, respectively.
 18. The device of claim 17,wherein the first diode is comprised in an Input-output (TO) ESD device.19. The device of claim 16 further comprising: a second FinFETcomprising: a second source region; a second gate electrode, wherein thesecond source region and the second gate electrode are interconnected toform a second diode, and the first diode and the second diode areconnected in parallel; and a second drain region electrically connectedto the plurality of source/drain regions and the first drain region. 20.The device of claim 16, wherein the first source region, the first drainregion, and the plurality of source/drain regions are formed of epitaxysilicon germanium regions.